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A Product Line of
Diodes Incorporated
ZXMN10A07Z
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
100
-
-
-
-
-
-
1.0
100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 100V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Note 9 & 11)
Diodes Forward Voltage (Note 9)
V GS(th)
R DS (ON)
g FS
V SD
2
-
-
-
-
-
-
1.6
0.85
4
700
900
-
0.95
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 1.5A
V GS = 6V, I D = 1A
V DS = 15V, I D = 1A
T J = 25 ° C, I S = 1.5A, V GS = 0V
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 10 & 11)
Output Capacitance (Note 10 & 11)
Reverse Transfer Capacitance (Note 10 & 11)
Gate Resistance (Note 10 & 11)
Total Gate Charge (Note 10 & 11)
Gate-Source Charge (Note 10 & 11)
Gate-Drain Charge (Note 10 & 11)
Reverse Recovery Time (Note 11)
Reverse Recovery Charge (Note 11)
Turn-On Delay Time (Note 10 & 11)
Turn-On Rise Time (Note 10 & 11)
Turn-Off Delay Time (Note 10 & 11)
Turn-Off Fall Time (Note 10 & 11)
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t rr
Q rr
t D(on)
t r
t D(off)
t f
-
-
-
1.8
-
-
-
-
-
-
-
138
12
6
-
2.9
0.7
1
27
12
1.8
1.5
4.1
2.1
-
-
-
2.6
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
ns
nC
ns
ns
ns
ns
V DS = 50V, V GS = 0V,
f = 1.0MHz
f = 1MHz, V GS = 0V, V DS = 0V
V GS = 10V, V DS = 50V,
I D = 1A
T J = 25 ° C, I F = 1A,
di/dt = 100A/ μ s
V GS = 10V, V DD = 50V,
R G = 6 ? , I D = 1A
Notes:
9. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
]
ZXMN10A07Z
Document number DS33565 Rev. 7- 2
3 of 7
www.diodes.com
June 2012
? Diodes Incorporated
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